HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.380 4LFL (M113)
epoxy sealed
.30 MHz
.28 VOLTS
.IMD −28 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
= 30 W MIN. WITH 18 dB GAIN
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN
planar transistor designed primarily for SSB com-
munications. This device utilizes emitter ballasting
for improved ruggedness and reliability.
PIN CONNECTION
BRANDING
1224-10
ORDER CODE
SD1224-10
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCEO Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 4.5 A
PDISS Power Dissipation 80 W
TJ Junction Temperature +200
°
C
TSTG Storage Temperature − 65 to +150
°
C
RTH(j-c) Junction-Case Thermal Resistance 2.2 °C/W
SD1224-10
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
October 1992
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