2004-03-30Rev. 2.1 Page 1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
V
DS
600 V
R
DS(on)
0.38 Ω
I
D
11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO262 P-TO220-3-1P-TO263-3-2
2
P-TO220-3-1
2
3
1
Type Package Ordering Code
SPP11N60S5 P-TO220-3-1 Q67040-S4198
SPB11N60S5 P-TO263-3-2 Q67040-S4199
SPI11N60S5 P-TO262 Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D

11
7
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
22
Avalanche energy, single pulse
I
D
= 5.5 A, V
DD
= 50 V
E
AS
340 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 11 A, V
DD
= 50 V
E
AR
0.6
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
11 A
Gate source voltage V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation, T
C
= 25°C P
tot
125 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C