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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

11EQS10

器件描述:Low Forward Voltage drop Diode
厂商主页:http://www.niec.co.jp/
文件大小:38.17KB,共6页
Sponsor by e络盟
器件资料摘要:
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OUTLINE DRAWING
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Maximum Ratings Approx Net Weight:0.17g
Rating Symbol 11EQS10 Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Without Fin or
P.C.Board
1.0 Ta=26°C
Average Rectified
Output Current P.C.Board
Mounted *
IO
1.0 Ta=53°C
Half Sine Wave Resistive Load A
RMS Forward Current IF(RMS) 1.57 A
Surge Forward Current IFSM 40 Half Sine Wave,1cycle,Non-repetitive A
Operating JunctionTemperature Range Tjw - 40 to + 150 °C
Storage Temperature Range Tstg - 40 to + 150 °C
Electrical • Thermal Characteristics
Characteristics Symbol Conditions Min Typ Max Unit
Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 0.5 mA
Peak Forward Voltage VFM Tj= 25°C, IFM= 1 A - - 0.85 V
Without Fin or P.C.Board 140
Thermal Resistance(Junction to Ambient) Rth(j-a)
P.C.Board mounted *
- -
110
°C/W
* :Print Lands = 5x5 mm,Both Sides















SBD Type :11111EEEQQQSSS1010
FEATURES
* Miniature Size
* Low Forward Voltage Drop
* High Surge Capability
* 30volts trough 100volts Types Available
* 26mm and 52mm Inside Tape Spacing Package Available
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