VHF PORTABLE/MOBILE APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M123)
epoxy sealed
.150 MHz
.7.5 VOLTS
.COMMON EMITTER
.P
OUT
= 2.5 W MIN. WITH 11.0 dB GAIN
DESCRIPTION
The SD1135-03 is a 7.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. It withstands severe mismatch
under operating conditions.
PIN CONNECTION
BRANDING
1135-3
ORDER CODE
SD1135-03
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCER Collector-Emitter Voltage 16 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 1.7 A
PDISS Power Dissipation 15 W
TJ Junction Temperature +200
°
C
TSTG Storage Temperature − 65 to +150
°
C
RTH(j-c) Junction-Case Thermal Resistance 11.6 °C/W
SD1135-03
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
October 1992
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