1A 600Vç T
jw
150ÆÆÆÆ
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Diffusion-type Silicon Rectifier Diodee S
Axialç Leadç Type





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Construction
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Diffusion-type Silicon Rectifier Diode
;M
Application
° ` Tv;
For General Use

Ù 7G¨ç MAXIMUM RATINGS
Item Symbol Condition Max. Rated value Unit
X“&`Д«o?y
Repetitive peak reverse voltage
VRRM


600 V
Ta = 58℃ *1 1.0
É Tv?v
Average rectified forward current
IO
50Hz正弦半波
50Hz half sine wave
抵抗負荷
Resistance load
Tl = 132℃
（Tl:Lead Temperature）
1.0
A
î® q?v
R.M.S. forward current
IF(RMS)


1.57 A
±”´ q?v
Surge forward current
IFSM
50Hz正弦半波1サイクル 非くり返し
50Hz half sine wave 1cycle, non-repetitive
45 A
ˆ^ €ù9S c“
Operating junction temperature range
Tjw µ 40™ +150 Æ
-9S c“
Storage temperature range
Tstg µ 40™ +150 Æ

Ù ?>$~ä$› Qç ELECTRICAL / THERMAL CHARACTERISTICS
Item Symbol Condition Min. Typ. Max. Unit
Д«o?v
Peak reverse current
IRM VRM=VRRM Tj=25Æ µ µ 10  A
Д« q?y
Peak forward voltage
VFM IFM=1A Tj=25Æ µ µ 1.0 V
Rth(j-a)
€ù æ~ *“
Junction to Ambient
*1(o.ÑŸïÁ` ) µ µ 91
ä Å
Thermal resistance
Rth(j-l)
€ù æ~æ”Å
Junction to Lead
µ µ 17
Æ /W
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