1T411
器件资料摘要：
—1—
E95304B83-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Peak reverse voltage VRM 35 V
(RL‡ 10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T411 is a variable capacitance diode
designed for analog cellular phone and it has a
super miniature package.
Features
• Super miniature package
• Small series resistance 0.40 Ω Max. (f=470 MHz)
• Large capacitance ratio 6.5 Typ. (C2/C25)
• Capacitance deviation in a matching group
3 % (max.)
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T411
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
f=1 MHz
CD=14 pF, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min. Typ. Max. Unit
20 nA
26.37 29.50 33.05 pF
4.030 4.400 4.807 pF
6.5
0.35 0.40 Ω
3%
E95304B83-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Peak reverse voltage VRM 35 V
(RL‡ 10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T411 is a variable capacitance diode
designed for analog cellular phone and it has a
super miniature package.
Features
• Super miniature package
• Small series resistance 0.40 Ω Max. (f=470 MHz)
• Large capacitance ratio 6.5 Typ. (C2/C25)
• Capacitance deviation in a matching group
3 % (max.)
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T411
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
f=1 MHz
CD=14 pF, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min. Typ. Max. Unit
20 nA
26.37 29.50 33.05 pF
4.030 4.400 4.807 pF
6.5
0.35 0.40 Ω
3%