Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Silicon Epitaxial Pin Diode
Variabe resistance Attenuator Use
Ordering number:ENN6262
1SV316
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73099GI (KT) No.6262–1/3
0.4
0.95 0.95
1.9
2.9
0.5
1.5 2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
1251A
[1SV316]
Features
· Ultrasmall-sized package facilitates high-density
mounting and permits 1SV316-applied equipment to
be made smaller.
· Small interterminal capacitance (C=0.23pF typ).
Electrical Connection
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Anode
2 : Cathode
3 : Cathode/Anode
SANYO : CP
Note ) The specifications shown above are for each individual diode.
Marking : UV
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRV
R
05V
tnerruCdrawroFI
F
05Am
noitapissiDrewoPelbawollAP 051Wm
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVesreveRV
R
I
R
Aµ01=05V
tnerruCesreveRI
R
V
R
V05= 1.0Aµ
egatloVdrawroF V
F
I
F
Am05=59.00.1V
ecnaticapaClanimretretnIC
R
zHM1=f,V05=32.0Fp
ecnatsiseRseireSsr
I
F
zHM001=f,Aµ01 042 W
I
F
zHM001=f,Am01= 469W
1
Anode
2
Cathode
Cathode / Anode
3