1SS376
Diodes
Switching diode
1SS376
!Applications
High voltage switching
!Features
1) Small surface mounting type. (UMD2)
2) VRM=300V guaranteed.
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
0.3±0.05 0.1±0.05
0.7
1.25±0.1
1.7
±
0.1
2.5
±
0.2
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
Model identification label
+0.2
−0.1
CATHODE MARK
!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
VRM 300 V
VR 250 V
IFM 300 mA
IO 100 mA
2A
125 °C
Tstg −55~+125 °C
Isurge
Tj
Peak reverse voltage
DC reverse voltage
Peak forward current
Surge current (10ms)
Junction temperature
Mean rectifying current
Storage temperature
!Electrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditons
VF −−1.2 V IF=100mA
IR −−0.2 µAVR=250V
−−3pFVR=0V, f=1MHz
trr −−100 ns IR=30mA, IF=30mA, Irr=3mA
CT
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
IR −−100 µAVR=300VReverse current