1SS356
Diodes
Rev.B 1/3
Band switching diode
1SS356


UMD2
2.
1
0.
8M
I
N
.
0.9MIN.
zApplications zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
High frequency switching


zFeatures
1) Small mold type. (UMD2)
2) High reliability.


zConstruction
Silicon epitaxial planar zStructure

ROHM : UMD2
JEITA : SC-90/A
JEDEC : S0D-323
dot (year week factory)



zTaping specifications (Unit : mm)











zAbsolute maximum ratings (Ta=25°C)








zElectrical characteristics (Ta=25°C)








0.
0
　 13± 0.05
.7± 0.2
　　 0.
0.1± 0.1
　　　 0.05
1.
7±
0.
1
2.
5±
0.
2
1.25± 0.1
4.0± 0.1 2.0± 0.05
φ 1.55± 0.05
1.40± 0.1 4.0± 0.1 φ 1.05
2.
75
3.
5
±
0.
0
5
1.
75±
0
.
1
8.
0
±
0.
2
0.3± 0.1
1.0± 0.1
2.
8
±
0.
1
Symbol Unit
I
F
mA
V
R
V
Tj
℃
Tstg
℃
Parameter
Reverse voltage (DC)
orward current (DC)
unction temperature
torage temperature
Limits
35
100
125
-55 to
＋
125
F
J
S
Symbol Min. Typ. Max. Unit
V
F
--1.0VI
F
=10mA
I
R
- - 10 nA V
R
=25V
Ct - - 1.2 pF V
R
=6V , f=1MHz
rf - - 0.9 Ω
I
F
=2mA , f=100MHz
Conditions
orward voltage
orward operating resistance
een terminals
Parameter
F
Reverse current
Capacitance betw
F