1SS133
Diodes
Rev.B 1/3
Switching diode
1SS133


zApplications zExternal dimensions (Unit : mm)
High speed switching
JEDEC : DO-34
ROHM : MSD
CATHODE BAND (YELLOW)
291 2912.70.3
φ0. 40.1
φ1. 80.2


zFeatures
1) Glass sealed envelope. (MSD)
2) High reliability.


zConstruction
Silicon epitaxial planar
zTaping specifications (Unit : mm)

T-72 52.4±1. 5
T-77 26.0+0.4
'-0
Ｂ 5.0± 0.5
Ｃ0.ＭＡＸ
Ｄ0
Ｅ 50.4±0. 4
Ｆ0.3ＭＡＸ
G1 0.1ＭＩＮ
G2 0ＭＩＮ
H1 6.0±0. 5
H2 5.0±0. 5
I0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t32MIN
＊ H2(6mm)：BROWN
注)　 累積ピ ッチの許 容差は20ピ ッチで± 1.5mm以下と する
記号
寸法 規格値
(mm)
Ａ
A
H2
H2
E
I
B
C
L2L1
F D
H1
t
H1
G2G1
IVORY
BLUE
Mark
Standard dimension
value (mm)
cf : cumulative pitch tolerance with 20 pitch than ±1.5mm













zAbsolute maximum ratings (Ta=25°C)








Symbol Unit
V
RM
V
V
R
V
I
FM
mA
Io mA
I
surge
mA
Pm
Tj ℃
Tstg ℃
W
verse voltage (DC) 80
orward voltage (repetitive peak) 400
Parameter Limits
verse voltage (repetitive peak) 90
600
nction temperature 175
wer dissipation 300
erage rectified forward current 130
age temperature -65 to 175
rge current (1s)
Re
Re
F
Av
Su
Po
Ju
Stor

zElectrical characteristics (Ta=25°C)





Symbol Min. Typ. Max. Unit Conditions
V
F
--1.2VI
F
=100mA
I
R
--0.5µAV
R
=80V
Ct - - 2 pF V
R
=0.5V , f=1MHz
Trr - - 4.0 ns VR=6V,IF=10mA,RL=50Ω ,Irr=1/10 IR


Reverse recovery time
Parameter
orward voltage
verse current
apacitance between terminal
F
Re
C