1N914(A)(B)
G03

500mW 100 Volt
Silicon Epitaxial
DiodesG03
DO-35

G29G48G44G57G58G55G48G56G03
• Low Current Leakage
• Compression Bond Construction
• Low Cost
DIMENSIONS



INCHES

MM

DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
G30G44G5BG4CG50G58G50G03G35G44G57G4CG51G4AG56G03
A
B
C
D
D
Cathode
Mark
www.mccsemi .com
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC
• Operating Temperature: -55
O
C to +150
O
C
• Storage Temperature: -55
O
C to +150
O
C
• Maximum Thermal Resistance; 300
O
C/W Junction To Ambient
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
VRRM 100V
Average Rectified
Forward Current
IO 200mA
Power Dissipation P
D
500mW
Junction Temperature T
J
150
O
C
Peak Forward Surge
Current

I
FSM

1.0A

4.0A
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
Minimum Breakdown
Voltage
V
R

100V
75V
I
R
=100uA,
I
R
=5.0uA
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B



VF



1.0V


720mV


T
J
= 25
O
C
IFM = 10mA;
I
FM
= 20mA;
IFM = 100mA;
I
FM
= 5.0mA;
Maximum Reverse
Current

I
R

25nA
5.0uA
50uA
VR=20V, TJ=25
O
C,
V
R
=75V, T
J
=25
O
C,
V
R
=20V, T
J
=150
O
C
Typical Junction
Capacitance
C
J
4.0pF
Measured at 1.0MHz,
V
R
=0V
Reverse Recovery
Time T
rr
4.0nS
I
F
=10mA
V
R
= 6V
R
L
=100 Ù, I
rr
=1.0mA
*Pulse test: Pulse width 300 usec, Duty cycle 2%