Philips Semiconductors Product Specification
Silicon Bi-directional Trigger Device BR100/03 LLD

GENERAL DESCRIPTION QUICK REFERENCE DATA
Silicon bidirectional trigger device in a SYMBOL PARAMETER MIN. MAX. UNIT
glass envelope suitable for surface
mounting. The device is intended for V
(BO)
Breakover voltage 28 36 V
use in triac and thyristor trigger V
O
Output voltage 7 - V
circuits. I
FRM
Repetitive peak forward current - 2 A
OUTLINE - SOD80 SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
Repetitive peak forward t ≤ 10 µs, T
tp
≤ 50˚C; f = 60 Hz - 2 A
current
P
tot
Total power dissipation T
tp
= 50˚C - 150 mW
T
stg
Storage temperature -55 125 ˚C
T
j
Operating junction - 100 ˚C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-tp
Thermal resistance junction to PCB mounted - 330 - K/W
tie point
CHARACTERISTICS
T
a
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BO)
Breakover voltage I = I
(BO)
28 32 36 V
|V
(BO)+
| - |V
(BO)-
| Breakover voltage symmetry I = I
(BO)
, see fig: 1 - - 3.5 V
V
O
Output voltage R
L
= 20 Ω; Circuit of fig: 2 7 - - V
I
(BO)
Breakover current V = V
(BO)
--50µA
dV
(BO)
/dT Temperature coefficient of - 0.1 - %/K
V
(BO)
t
r
Risetime I
p
= 0.5 A; Circuit of fig: 2 - 1.5 µs
February 1996 1 Rev 1.000