Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480 Fax (408)) 432-3440




Silicon Bipolar

Low Noise

Microwave Transistors 2N2857

Features

• High Gain (19dB Typical @ 450 MHz)
• Low Noise Figure At Low Ic
• Gold Metalization
• Useful To 700 MHz
• Can be Screened to JANTX, JANTXV Equivalent Levels
• Excellent Reliability


Description

Designed especially for low cost, high reliability type
applications, this NPN Silicon Planar Transistor offers
low noise, high gain performance, which meets or
exceeds all JAN specifications. These devices can be
fully tested and screened in accordance with MIL-MRF-
19500 procedures. A 1.8 GHz current gain-bandwidth
product (f
T
) is typical for this device. The transistors are
rugged and employ gold metalization for an
unprecedented reliability.


Applications

IF, VHF, UHF, TV and RF amplifiers.



Case Style TO-72 CAN (509)