JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors


BD034 TRANSISTOR (PNP)

FEATURES
Power dissipation
P
CM:
1.25 W (Tamb=25℃)
Collector current
I
CM:
-2.5 A
Collector-base voltage
V
(BR)CBO
: -110 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO Ic=-100µA, IE=0 -110 V
Collector-emitter breakdown voltage V
(BR)CEO Ic=-10mA, IB=0 -80 V
Emitter-base breakdown voltage V
(BR)EBO IE=-100µA, IC=0 -7 V
Collector cut-off current ICBO V
CB
=-100V, I
E
=0 -1 µA
Emitter cut-off current IEBO V
EB
=-5V, I
C
=0 -1 µA
h
FE(1)
V
CE
=-2V, I
C
=-100mA 100 560
DC current gain
h
FE(2)
V
CE
=-2V, I
C
=-1.5A 40
Collector-emitter saturation voltage VCE(sat) I
C
=-2A, I
B
=-200mA -0.5 V
Base-emitter voltage VBE V
CE
=-5V, I
C
=-500mA -1 V
Transition frequency f
T
V
CE
=-1V, I
C
=-250mA, f=1MHz 3 MHz


CLASSIFICATION OF h
FE(1)

Rank R S T U
Range 100-200 140-280 200-400 280-560









1 2 3
TO-126



1. EMITTER

2. COLLECTOR

3. BASE