JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BC350 TRANSISTOR (PNP)

FEATURES

Power dissipation
PCM : 0.3 W（ Tamb=25℃）
Collector current
ICM: -0.1 A
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μ A ， IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μ A， IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μ A
Collector cut-off current ICEO VCE=-35V, IB=0 -0.1 μ A
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μ A
DC current gain hFE VCE=-5 V, IC= -2mA 40 450
Collector-emitter saturation voltage VCEsat IC= -10mA, IB= -1mA -0.3 V
Base-emitter saturation voltage VBEsat IC= -10mA, IB= -1mA -1 V
Transition frequency fT VCE=-5V,IC=-10mA, f=30MHz 125 MHz



1 2 3

TO— 92



1.EMITTER

2. BASE

3. COLLECTOR