JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BC347 TRANSISTOR (NPN)

FEATURES

Power dissipation
PCM : 0.3 W（ Tamb=25℃）
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO : 50 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ， IE=0 50 V
Collector-emitter breakdown voltage V(BR)CE
O
IC= 1mA , IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 5 V
Collector cut-off current ICBO VCB=50V, IE=0 0.1 μ A
Collector cut-off current ICEO VCE=35V, IB=0 0.1 μ A
Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μ A
DC current gain hFE VCE=5 V, IC= 2mA 40 450
Collector-emitter saturation voltage VCEsat IC= 10mA, IB= 1mA 0.3 V
Base-emitter saturation voltage VBEsat IC= 10mA, IB= 1mA 1 V
Transition frequency fT VCE=5V,IC=10mA, f=30MHz 125 MHz



1 2 3

TO— 92



1.EMITTER

2. BASE

3. COLLECTOR