JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

BAV199DW Multi-Chip DIODES

FEATURES
Power dissipation
P
CM:
0.2 W (Tamb=25℃)
Collector current
I
F
: 200 mA
Collector-base voltage
V
R
: 85 V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
MARKING:K52








ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Reverse breakdown voltage V(BR) R IR= 100µA 85

V
Reverse voltage leakage current IR VR=75V

5 nA
Forward voltage V
F

I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA

0.9
1.0
1.1
1.25
V
Junction capacitance Cj VR=0V f=1MHz
2
pF
Reveres recovery time trr
I
F
=I
R
=10mA
I
rr
=0.1ХI
R

R
L
=100Ω


3 nS














SOT-363