Features
2.70
3.70
0
.
5
5
1
.
0
5
1
.
6











SOD-123
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
c183 Low Forward Voltage Drop
c183 Guard Ring Construction for
Transient Protection
c183 High Conductance
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol B0520LW B0530W B0540W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current @ T
L
= 100c176C IO 0.5 A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDECMethod)
I
FSM 5.5 A
Power Dissipation (Note 1) Pd 410 mW
Typical Thermal Resistance Junction to Ambient (Note 1) Rc113JA 244 c176C/W
Operating and Storage Temperature Range Tj,TSTG -65 to +125 c176C
Voltage Rate of Change dv/dt 1000 V/c109s
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Pulse Test: Pulse width = 300c109s, Duty Cyclec1632%.
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol B0520LW B0530W B0540W Unit Test Conditions
Minimum Reverse Breakdown Voltage (Note 2) V(BR)R
20
c190
c190
c190
30
c190
c190
c190
40
V
I
R
= 250c109A
I
R
= 130c109A
I
R
= 20c109A
Maximum Forward Voltage Drop
(Note 2)
V
FM
0.300
0.385
c190
0.220
0.330
c190
0.375
0.430
c190
c190
c190
c190
c190
0.510
0.620
c190
0.460
0.610
V
I
F
= 0.1A,T
j
= 25c176C
I
F
= 0.5A,T
j
= 25c176C
I
F
= 1.0A,T
j
= 25c176C
I
F
= 0.1A,T
j
= 100c176C
I
F
= 0.5A,T
j
= 100c176C
I
F
= 1.0A,T
j
= 100c176C
Maximum Leakage Current
(Note 2)
I
RM
75
c190
250
c190
c190
c190
20
c190
130
c190
c190
c190
10
c190
20
c109A
V
R
= 10V,T
j
= 25c176C
V
R
= 15V,T
j
= 25c176C
V
R
= 20V,T
j
= 25c176C
V
R
= 30V,T
j
= 25c176C
V
R
= 40V,T
j
= 25c176C
5.0
8.0
c190
c190
c190
c190
c190
5.0
13
mA
V
R
= 10V,T
j
= 100c176C
V
R
= 20V,T
j
= 100c176C
V
R
= 40V,T
j
= 100c176C
Junction Capacitance Cj 170 pF f = 1MHz, VR= 0V DC