2.70
3.70
0
.
5
5
1
.
0
5
1
.
6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-323 Plastic-Encapsulate Diode


B5819WS SCHOTTKY BARRIER DIODE
FEATURES

Power dissipation
P
D:
200 mW (Tamb=25℃)
Collector current
I
F
: 1 A
Collector-base voltage
V
R
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃



MARKING: SL


ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V
(BR)
I
R
= 1mA 40 V
Reverse voltage leakage current I
R

V
R
=40V
V
R
=4V
V
R
=6V

1
0.05
0.075
mA
Forward voltage V
F

I
F
=0.1A
I
F
=1A
I
F
=3A


0.45
0.6
0.9
V
Diode capacitance C
D
V
R
=4V, f=1MHz 120 pF









SOD-323
+
-