2.70
3.70
0.55
1.05
1.6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diode


B5819W SCHOTTKY BARRIER DIODE
FEATURES：

Power dissipation
PD : 450 mW（ Tamb=25℃）
Collector current
IF: 1 A
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃



MARKING： SL


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 1mA 40 V
Reverse voltage leakage current IR
VR=40V
VR=4V
VR=6V

1
0.05
0.075
mA
Forward voltage VF
IF=0.1A
IF=1A
IF=3A


0.45
0.6
0.9
V
Diode capacitance CD VR=4V f=1MHz 120 pF





















Unit： mm
SO D - 1 23