2.70
3.70
0.55
1.05
1.6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diode


B5817W SCHOTTKY BARRIER DIODE
FEATURES：

Power dissipation
PD : 450 mW（ Tamb=25℃）
Collector current
IF: 1 A
Collector-base voltage
VR: 20 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃



MARKING： SJ


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 1mA 20 V
Reverse voltage leakage current IR VR=20V 1 mA
Forward voltage VF IF=1A
IF=3A


0.45
0.75
V
Diode capacitance CD VR=4V f=1MHz 120 pF




















Unit： mm
SO D - 1 23