JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

A94 TRANSISTOR（ PNP ）
FEATURES

Power dissipation
PCM: 0.625 W （ Tamb=25℃）
Collector current
ICM: -0.2 A
Collector-base voltage
V(BR)CBO : -400 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃
unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V (BR) CBO Ic= -100μ A， IE=0 -400 V
Collector-emitter breakdown voltage V (BR) CEO IC= -1 mA， IB=0 -400 V
Emitter-base breakdown voltage V (BR) EBO IE=-100μ A， IC=0 -5 V
Collector cut-off current ICBO VCB=-400 V, IE=0 -0.1 μ A
Collector cut-off current ICEO VCE=-400 V, IB=0 -5 μ A
Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 μ A
hFE（ 1） VCE=-10V, IC=-10 mA 80 300
hFE（ 2） VCE=-10V, IC=-1mA 70 DC current gain
hFE（ 3） VCE=-10V, IC=-100 mA 60
VCE (sat) IC=-10 mA， IB=-1mA -0.2 V
Collector-emitter saturation voltage
VCE (sat) IC=-50 mA， IB=-5mA -0.3 V
Base-emitter saturation voltage VBE (sat) IC=-10 mA， IB= -1 mA -0.75 V
Transition frequency fT VCE=-20V， IC=-10mA f =30MHz 50 MHz




1 2 3

TO— 92




1.EMITTER

2.BASE

3. COLLECTOR