1.9
0.95
0.95
2.9
0.4
1.3
2.4
1.0
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors


A733LT1 TRANSISTOR（ PNP ）

FEATURES

Power dissipation
PCM : 0.2 W（ Tamb=25℃）
Collector current
ICM : -0.15 A
Collector-base voltage
V(BR)CBO : -60 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -5 μ A ， IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -50 μ A， IC=0 -5 V
Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 μ A
Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 μ A
DC current gain HFE（ 1） VCE= -6 V, IC= -1mA 120 475
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V
Transition frequency f T
VCE= -6 V, IC=-10mA

f = 30MHz
50 MHz

CLASSIFICATION OF HFE(1)
Rank L H
Range 120-200 200-475
MARKING CS


























Unit : mm
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR