JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors



A44 TRANSISTOR（ NPN ）

FEATURES

Power dissipation
PCM : 0.625 W （ Tamb=25℃）
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 400 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ， IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=100μ A， IC=0 5 V
Collector cut-off current ICBO VCB=400 V , IE=0 0.1 μ A
Collector cut-off current ICEO VCE=400 V , 5 μ A
Emitter cut-off current IEBO VEB= 4 V , IC=0 0.1 μ A
HFE（ 1） VCE=10V , IC=10 mA 80 300
HFE（ 2） VCE=10V, IC=1mA 70 DC current gain
HFE（ 3） VCE=10V ,IC=100 mA 60
VCE(sat) IC=10 mA, IB=1mA 0.2 V
Collector-emitter saturation voltage
VCE(sat) IC=50 mA, IB=5mA 0.3 V
Base-emitter sataration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V
Transition frequency f T
VCE=20V, IC=10mA

f =30MHz
50 MHz




1 2 3

TO— 92




1.EMITTER

2.BASE

3. COLLECTOR