JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

A42 TRANSISTOR（ NPN ）
FEATURES

Power dissipation
PCM : 0.625 W（ Tamb=25℃）
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 300 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μ A， IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 5 V
Collector cut-off current ICBO VCB= 200 V IE=0 0.25 μ A
Emitter cut-off current IEBO VEB= 5 V， IC=0 0.1 μ A
hFE（ 1） VCE= 10 V, IC= 1 mA 60
hFE（ 2） VCE= 10V, IC = 10 mA 80 250 DC current gain
HFE（ 3） VCE= 10 V, IC=30 mA 75
Collector-emitter saturation voltage VCE(sat) IC= 20 mA, IB= 2 mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB= 2 mA 0.9 V
Transition frequency fT VCE=20 V, IC= 10 mA f =30MHz 50 MHz

CLASSIFICATION OF hFE(2)
Rank A B1 B2 C
Range 80-100 100-150 150-200 200-250



1 2 3

TO— 92




1.EMITTER

2.BASE

3.COLLECTOR