1.9
0.95
0.95
1.0
2.9
2.4
1.3
0.4
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors


A1015LT1 TRANSISTOR（ PNP ）

FEATURES

Power dissipation
PCM : 0.2 W（ Tamb=25℃）
Collector current
ICM : -0.15 A
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μ A， IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA， IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -10μ A， IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μ A
Collector cut-off current ICEO VCE= -50 V , IB=0 -0.1 μ A
Emitter cut-off current IEBO VEB=- 5V , IC=0 -0.1 μ A
DC current gain HFE(1) VCE=-6V, IC= -2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V
Transition frequency fT VCE=-10V, IC= -1mA f=
30MHz 80 MHz

CLASSIFICATION OF HFE(1)
Rank L H
Range 130 - 200 200 - 400
MARKING BA


























Unit : mm
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR