JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors



8550S TRANSISTOR（ PNP ）
FEATURE
Power dissipation
PCM : 0.625 W（ Tamb=25℃）
Collector current
ICM : -0.5 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100μ A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA， IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μ A， IC=0 -5 V
Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μ A
Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 μ A
Emitter cut-off current IEBO VEB= - 3 V， IC=0 -0.1 μ A
hFE（ 1） VCE= -1 V, IC= -50mA 85 300
DC current gain
hFE（ 2） VCE= -1 V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50 mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50 mA -1.2 V
Transition frequency fT
VCE=- 6 V, IC=-20mA

f =30MHz
150 MHz

CLASSIFICATION OF hFE(1)
Rank B C D
Range 85-160 120-200 160-300




1 2 3

TO— 92



1.EMITTER

2. COLLECTOR

3.BASE