JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

8050SS TRANSISTOR（ NPN ）

FEATURES
Power dissipation
PCM : 1 W （ Tamb=25℃）
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 μ A ， IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 μ A， IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μ A
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μ A
Emitter cut-off current IEBO VEB= 5 V , IC=0 0.1 μ A
hFE（ 1） VCE= 1 V , IC= 100 mA 85 300
DC current gain
hFE（ 2） VCE= 1 V , IC=800 mA 40
Collector-emitter saturation voltage VCE(sat) IC= 800 mA, IB= 80 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 800mA, IB= 80 mA 1.2 V
Transition frequency f T
VCE= 10 V, IC= 50mA

f =30 MHz
100 MHz

CLASSIFICATION OF hFE(1)
Rank B C D
Range 85-160 120-200 160-300



1 2 3

TO— 92




1.EMITTER

2. COLLECTOR

3. BASE