JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors



8050S TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 0.625 W（ Tamb=25℃）
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μ A , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μ A， IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μ A
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μ A
Emitter cut-off current IEBO VEB= 3 V， IC=0 0.1 μ A
hFE（ 1） VCE= 1 V, IC= 50mA 85 300
DC current gain
hFE（ 2） VCE= 1 V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50 mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50 mA 1.2 V
Transition frequency fT
VCE= 6 V, IC=20mA

f =30MHz
150 MHz
CLASSIFICATION OF hFE(1)
Rank B C D
Range 85-160 120-200 160-300




1 2 3

TO— 92



1.EMITTER

2. COLLECTOR

3.BASE