JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DK2222A TRANSISTOR(NPN )

FEATURE
Power dissipation
P
CM
: 0.625 W(Tamb=25℃)

MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 75 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current -Continuous 600 mA
P
D
Total Device Dissipation 625 mW
T
J
Junction Temperature 150 ℃
T
stg
Junction and Storage Temperature -55-150 ℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)
CBO
Ic= 10uA , I
E
=0 75 V
Collector-emitter breakdown voltage V(BR)
CEO
I
C
= 10 mA , I
B
=0 40
Emitter-base breakdown voltage V(BR)
EBO
I
E
= 10uA, I
C
=0 6 V
Collector cut-off current I
CBO
V
CB
= 60 V , I
E
=0 10 nA
Collector cut-off current I
CEX
V
CE
= 60 V , V
EB(OFF)
=3V 10 nA
Emitter cut-off current IEBO VEB= 3 V , IC=0 10 nA
h
FE(1)
V
CE
=10 V, I
C
= 150mA 100 300
h
FE(2)
V
CE
=10 V, I
C
= 0.1mA 40 DC current gain
h
FE(3)
V
CE
=10 V, I
C
= 500mA 42
V
CE(sat)(1)
I
C
= 500 mA, I
B
= 50 mA 0.6 V
Collector-emitter saturation voltage
V
CE(sat)(2)
I
C
= 150 mA, I
B
= 15 mA 0.3 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 1.2 V
Storage time t
stg
V
CC
=30V, I
C
=150mA, I
B1
=I
B2
=15mA 225 ns
Transition frequency f
T
V
CE
= 20 V, I
C
= 20mA, f = 100MHz 300 MHz

CLASSIFICATION OF h
FE(1)

Rank L H
Range 100-200 200-300


1 2 3
TO-92


1. EMITTER

2. BASE

3. COLLECTOR