JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors


3DD13007 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 2 W（ Tamb=25℃）
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1mA， IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA， IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA， IC=0 9 V
Collector cut-off current ICBO VCB= 700V， IE=0 1 mA
Emitter cut-off current IEBO VEB= 9 V， IC=0 100 µA
hFE（ 1） VCE= 5V, IC= 2 A 8 40
DC current gain
hFE（ 2） VCE=5 V, IC=5A 5 30
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V
Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V
Transition frequency fT Ic=500mA,VCE=10V f=1MH
Z
4 MHZ
Collector output capacitance Cob VCE=10,IE=0， f=0.1MHz 80 pF
Fall time tf 0.7 µs
Storage time ts
Vcc=125V, Ic=5A

IB1=-IB2=1A 3 µs
CLASSIFICATION OF hFE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40




1 2 3
TO— 220




1.BASE
2.COLLECTOR

3.EMITTER