JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors



3DD13005 TRANSISTOR（ NPN ）

FEATURES
Power dissipation
PCM : 1.5 W（ Tamb=25℃）
Collector current
ICM: 4 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000 µA， IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA， IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1000 µA， IC=0 9 V
Collector cut-off current ICBO VCB= 700 V， IE=0 1000 µA
Collector cut-off current ICEO VCE= 400 V， IB=0 100 µA
Emitter cut-off current IEBO VEB= 9 V， IC=0 1000 µA
DC current gain hFE VCE= 5 V, IC= 1000mA 10 40
Collector-emitter saturation voltage VCE (sat) IC=2000mA,IB=500 mA 0.6 V
Base-emitter saturation voltage VBE (sat) IC=2000mA, IB= 500mA 1.6 V
Transition Frequency f T VCE=10 V, IC=500mA
f = 1MHz
5 MHz
Fall time t f 0.9 µs
Storage time t s
IB1=-IB2=0.4A, IC=2A

VCC=120V 4 µs

CLASSIFICATION OF hFE
Rank
Range 10-15 15-20 20-25 25-30 30-35 35-40




1 2 3
TO— 220




1.BASE
2.COLLECTOR

3.EMITTER