JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors


3DD13003 TRANSISTOR ( NPN )
FEATURES
· power switching applications

MAXIMUM RATINGS* T
A
=25 unless otherwise noted ℃
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 700 V
V
CEO
Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 9 V
I
C
Collector Current -Continuous 1.5 A
P
C
Collector Dissipation 2 W
T
J
, T
stg
Junction and Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000uA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)
CEO
Ic= 10 mA, I
B
=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V
Collector cut-off current I
CBO
V
CB
= 700V , I
E
=0 1000 µA
Collector cut-off current ICEO VCE= 400V, B=0 500 µA
Emitter cut-off current IEBO VEB= 9 V, IC=0 1000 µA
h
FE（1）
V
CE
= 5 V, I
C
= 0.5 A 8 40
DC current gain
h
FE（2）
V
CE
= 5 V, I
C
= 1.5A 5
Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V
Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V
Base-emitter voltage VBE IE= 2000 mA 3 V
Transition frequency fT
V
CE
=10V,Ic=100mA
f =1MHz
5 MHz
Fall time tf 0.5 µs
Storage time ts
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5 µs

CLASSIFICATION OF h
FE (1)

Rank
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40




1 2 3
TO-220

1. BASE

2. COLLECTOR

3. EMITTER