JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors


3DD13003 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 1.25 W（ Tamb=25℃）
Collector current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000μ A， IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA， IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1000μ A， IC=0 9 V
Collector cut-off current ICBO VCB= 700 V， IE=0 1000 µA
Collector cut-off current ICEO VCE= 400 V， IB=0 500 µA
Emitter cut-off current IEBO VEB= 9 V， IC=0 1000 µA
HFE（ 1） VCE= 2 V, IC= 0.5 A 8 40
DC current gain
HFE（ 2） VCE= 10 V, IC= 0.5 mA 5
Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V
Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V
Base-emitter voltage VBE IE= 2000 mA 3 V
Transition frequency fT VCE=10V,Ic=100mA f =1MHz 5 MHz
Fall time tf 0.5 µs
Storage time ts
IC=1A, IB1=-IB2=0.2A

VCC=100V 2.5 µs
CLASSIFICATION OF HFE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40





1 2 3
TO— 126




1.BASE

2.COLLECTOR

3.EMITTER