JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors


3DD13002/ 3DD13002B TRANSISTOR (NPN)

FEATURE
Power dissipation
P
CM:
900 mW (Tamb=25℃)
Collector current
I
CM:
3DD13002: 1 A
3DD13002B: 0.8 A
Collector-base voltage
V
(BR)CBO:
600 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100µA, I
E
=0 600 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO I
E
= 100µA, I
C
=0 6 V
Collector cut-off current ICBO VCB= 600V, IE=0 100 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 100 µA
h
FE(1)
V
CE
= 10V, I
C
= 200 mA 9 40

h
FE(2)
V
CE
= 10V, I
C
= 10 mA 6
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40 mA 1.1 V
Transition frequency fT
V
CE
=10V, Ic=100mA
f =1MHz
5 MHz
Fall time tf 0.5 µs
Storage time ts
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5 µs

CLASSIFICATION OF hFE
(1)

Range 9-15 15-20 20-25 25-30 30-35 35-40



1 2 3

TO-92



1. EMITTER

2. COLLECTOR

3. BASE