JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

3CA1837 TRANSISTOR (PNP)

FEATURES
. High Transition Frequency : f
T
=70MH
Z
(Typ)
. Complementary to 3DA4793
. Collector Power Dissipation
P
CM
: 2W (Tamb=25℃)
20 W (Tcase=25℃)

MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -230 V
V
CEO
Collector-Emitter Voltage -230 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -1000 mA
I
B
Base Current -100 mA
T
J
Junction Junction 150 ℃
T
stg
Storage Junction -55-150 ℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
Ic=-100µA , I
E
=0 -230 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -230 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V
Collector cut-off current ICBO VCB=-230V, IE=0 -10 µA
Emitter cut-off current IEBO VEB=-5V, IC=0 -10 µA
DC current gain hFE VCE=-5V, IC=-100mA 100 320
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -1.5 V
Transition frequency fT VCE=-10V, IC=-100mA 30 MHz





TO-220F




1. BASE

2. COLLECTOR

3. EMITTE