JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors


2SD886 TRANSISTOR (NPN)

FEATURES
Power dissipation
P
CM:
1 W (Tamb=25℃)
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100µA, I
E
=0 50 V
Collector-emitter breakdown voltage V(BR)CEO Ic=5mA, I
B
=0 50 V
Emitter-base breakdown voltage V(BR)EBO I
E
=100µA, I
C
=0 5 V
Collector cut-off current ICBO V
CB
=50V, I
E
=0 1 µA
Emitter cut-off current IEBO V
EB
=3V, I
C
=0 1 µA
h
FE(1)
V
CE
=2V, I
C
=20mA 100
DC current gain
h
FE(2)
V
CE
=2V, I
C
=1A 100 400
Collector-emitter saturation voltage VCE(sat) I
C
=2A, I
B
=200mA 0.5 V
Base-emitter saturation voltage VBE(sat) I
C
=2A, I
B
=200mA 2 V
Transition frequency f
T
V
CE
=5V, I
C
=100mA 80 MHz
Collector output capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 45 pF













1 2 3
TO—126


1. EMITTER

2. COLLECTOR

3. BASE