JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89 Plastic-Encapsulate Transistors


2SD2150 TRANSISTOR NPN

FEATURES
Power dissipation
P
CM
: 0.5 W Tamb=25
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150


ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=50 A,I
E
=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,I
B
=0 20 V
Emitter-base breakdown voltage V(BR)EBO I
E
=50 A,I
C
=0 6 V
Collector cut-off current ICBO V
CB
=30V,I
E
=0 0.1 A
Emitter cut-off current IEBO V
EB
=5V,I
C
=0 0.1 A
DC current gain hFE(1) V
CE
=2V,I
C
=0.1A 180 560
Collector-emitter saturation voltage VCE(sat) I
C
=2A,I
B
=100mA 0.5 V
Transition frequency f
T
V
CE
=2V,I
C
=0.5A ,f=100MHz 290 MHz
Collector output capacitance Cob V
CB
=10V,I
E
=0,f=1MHz 25 pF

CLASSIFICATION OF h
FE(1)

Rank Q R S
Range 120-270 180-390 270-560
Marking CFQ CFR CFS





SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

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