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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03A Plastic-Encapsulate Transistors

2SC4115E TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor

FEATURES
Low V
CE
(sat).V
CE
(sat) = 0.2V (Typ.)(I
C
/I
B
= 2A/0.1A)

APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)

MARKING:CFQ, CFR, CFS
C

CFQ

B E
MAXIMUM RATINGS T
A
=25 unless otherwise noted ℃
Symbol Parameter Value Units
V
CBO

Collector-Base Voltage
40 V
V
CEO

Collector-Emitter Voltage
20 V
V
EBO

Emitter-Base Voltage
6 V
I
C
Collector Current -Continuous 3 A
P
D
Total Device Dissipation 150 mW
T
J
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
= 50µA , I
E
=0 40 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
= 1mA , I
B
=0 20 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=50µA, I
C
=0 6 V
Collector cut-off current I
CBO
V
CB
=30V , I
E
=0 0.1 µA
Emitter cut-off current I
EBO
V
EB
= 5V , I
C
=0 0.1 µA
DC current gain h
FE
V
CE
=2 V, I
C
= 0.1A 120 560
Collector-emitter saturation voltage* V
CEsat
I
C
= 2A, I
B
=0.1A 0.5 V
Transition frequency f
T

V
CE
=2V, I
C
=0.5 A
f=100MHz
290 MHz
Collector output capacitance C
obo
V
CB
=10V,I
E
=0,f=1MHz 25 pF
CLASSIFICATION OF h
FE

Rank Q R S
Range 120-270 180-390 270-560
WBFBP-03A
(1.6×1.6×0.5)
unit: mm


1. BASE
2. EMITTER
3. COLLECTOR