1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors


2SC3052 TRANSISTOR (NPN)

FEATURES

Power dissipation
P
CM
: 0.15 W (Tamb=25℃)
Collector current
I
CM:
0.2 A
Collector-base voltage
V
(BR) CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
(BR) CBO
I
C
= 100 µA, I
E
=0 50 V
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 100 µA, I
B
=0 50 V
Emitter-base breakdown voltage V
(BR) EBO
I
E
= 100 µA, I
C
=0 6 V
Collector cut-off current I
CBO
V
CB
= 50 V , I
E
=0 0.1 µA
Emitter cut-off current I
EBO
V
EB
= 6V , I
C
=0 0.1 µA
h
FE(1)
V
CE
= 6V, I
C
= 1mA 150 800
DC current gain
h
FE(2)
V
CE
= 6V, I
C
= 0.1mA 50
Collector-emitter saturation voltage V
CE
(sat) I
C
=100mA, I
B
= 10mA 0.3 V
Base-emitter saturation voltage V
BE
(sat) I
C
= 100mA, I
B
= 10mA 1 V
Transition frequency f
T
VCE= 6V, IC= 10mA 180 MHz
Collector output capacitance C
ob
VCE=6V, IE=0, f=1MHz 4 pF
Noise figure NF V
CE
=6V,I
E
=-0.1mA, f=1KHz, R
G
=2KΩ 15 dB

CLASSIFICATION OF h
FE(1)

Rank E F G
Range 150~300 250~500 400~800
Marking LE LF LG

























Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR