JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors


2SA821 TRANSISTOR (PNP)

FEATURES

Power dissipation
PCM : 0.25 W（ Tamb=25℃）
Collector current
ICM: -0.03 A
Collector-base voltage
V(BR)CBO : -210 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃


ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -50μ A ， IE=0 -210 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -210 V
Emitter-base breakdown voltage V(BR)EBO IE= -50μ A， IC=0 -5 V
Collector cut-off current ICBO VCB=-150V, IE=0 -1 μ A
Emitter cut-off current IEBO VEB= -4.5 V , IC=0 -1 μ A
DC current gain hFE VCE=-3 V, IC= -5mA 56 270
Collector-emitter saturation voltage VCEsat IC= -2mA, IB= -0.2mA -0.6 V
Transition frequency f T VCE=-5V, IC= -2mA 30 MHz
Output capacitance Cob VCE=-10V, IE=0,f=1MHz 12 pF


CLASSIFICATION OF hFE
Rank N P Q
Range 56-120 82-180 120-270



1 2 3

TO— 92



1.EMITTER

2. COLLECTOR

3. BASE