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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors


2SC2715M TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor

FEATURES
High power gain: G
pe
=27dB(f=10.7MHz)
Recommended for FM IF,OSC Stage and AM CONV.IF Stage

APPLICATION
High Frequency amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)

MARKING: RR,RO,RY
C

RR

B E

AXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 35 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current -Continuous 50 mA
P
C
Collector Dissipation 150 mW
T
J
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO I
C
=10µA, I
E
=0 35 V
Collector-emitter breakdown voltage V(BR)CEO I
C
=1mA, I
B
=0 30 V
Emitter-base breakdown voltage V(BR)EBO I
E
=10µA, I
C
=0 4 V
Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA
Emitter cut-off current IEBO V
EB
=4V, I
C
=0 0.1 µA
DC current gain h
FE
V
CE
=12V, I
C
=2mA 40 240
Collector-emitter saturation voltage V
CE(sat)
I
C
=10mA, I
B
=1mA 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
=10mA, I
B
=1mA 1 V
Transition frequency f
T
V
CE
=10V, I
C
=1mA 100 400 MHz
Collector output capacitance C
ob
V
CB
=10V, I
E
=0, f=1MHZ 3.2 pF
Collector- Base time constant Cc.rbb’ V
CE
=10V, I
C
=1mA, f=30MHZ 50 ps
Power Gain Gp V
CE
=6V, I
C
=1mA, f=10.7MHZ 27 33 dB

WBFBP-03B
(1.2×1.2×0.5)
unit: mm


1. BASE
2. EMITTER
3. COLLECTOR