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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate MOSFET

2N7002M MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.

FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.

APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)

MARKING: 72
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72

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MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
DS
Drain-Source voltage 60 V
I
D
Drain Current 115 mA
P
D
Power Dissipation 150 mW
R
θ
JA Thermal Resistance. Junction to Ambient Air 625 ℃/W
T
J
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃









WBFBP-03B
(1.2×1.2×0.5)
unit: mm



1. GATE
2. SOURCE
3. DRAIN