JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SA1179 TRANSISTOR (PNP)

FEATURES
. High breakdown voltage

MARKING: M


MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -55 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -150 mA
P
D
Total Device Dissipation 200 mW
T
J
, T
stg
Junction and Storage Temperature -55-125 ℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
Ic=-10u A,I
E
=0 -55 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 u A
Emitter cut-off current I
EBO
V
EB
=-4V,I
C
=0 -0.1 u A
DC current gain hFE VCE=-6V,IC=-1mA 200 400
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V
Transition frequency fT VCE=-6V,IC=-10mA 180 MHz
Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF


SOT-23



1. BASE
2. EMITTER
3. COLLECTOR