A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
°
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA 110 V
BV
CES
I
C
= 100 mA 110 V
BV
CEO
I
C
= 200 mA 65 V
BV
EBO
I
E
= 10 mA 4.0 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA 15 90 ---
C
ob
V
CB
= 50 V f = 1.0 MHz 60 pF
G
P
IMD
3
V
CE
= 50 V P
OUT
= 25 W (PEP) f = 30 MHz
18 20
- 37
-34
dB
dBc
NPN SILICON RF POWER TRANSISTOR
MRF427
DESCRIPTION:
The ASI MRF427 is Designed for
high voltage applications up to 30 MHz
FEATURES:
• P
G
= 18 dB min. at 25 W/30 MHz
• IMD
3
= -34 dBc max. at 25 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
6.0 A
V
CBO
110 V
V
CEO
65 V
V
EBO
4.0 V
P
DISS
80 W @ T
C
= 25 °C
T
J
-65
O
C to +200 °C
T
STG
-65
O
C to +150 °C
θ
JC
2.19 °C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10467
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H .003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
E
C
E
B