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®
AS4C1M16E5
4/11/01; v.1.0 Alliance Semiconductor P. 1 of 22
5V 1M×16 CMOS DRAM (EDO)
Features
• Organization: 1,048,576 words × 16 bits
High speed
- 45/50/60 ns RAS access time
- 20/20/25 ns hyper page cycle time
- 10/12/15 ns CAS access time
Low power consumption
- Active: 740 mW max (AS4C1M16E5-60)
- Standby: 5.5 mW max, CMOS DQ
Extended data out
1024 refresh cycles, 16 ms refresh interval
-RAS-only or CAS-before-RAS refresh Read-modify-write
TTL-compatible, three-state DQ
JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
5V power supply (AS4C1M16E5)
3V power supply (AS4LC1M16E5)
Industrial and commercial temperature available
Pin arrangement
42
41
40
39
38
37
36
35
34
33
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
SOJ
32
31
30
29
28
27
26
25
24
23
NC
LCAS
UCAS
OE
A9
A8
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
Vcc
DQ1
DQ2
DQ3
DQ4
Vcc
DQ5
DQ6
DQ7
DQ8
11
12
13
14
15
16
17
18
19
20
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
2221Vcc
A7
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
NC
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
NC
LCAS
UCAS
OE
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
TSOP II
23
24
25
28
27
26
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
A9
A8
A7
A6
A5
A4
V
SS
Pin designation
Pin(s) Description
A0 to A9 Address inputs
RAS Row address strobe
DQ1 to DQ16 Input/output
OE Output enable
WE Write enable
UCAS Column address strobe, upper byte
LCAS Column address strobe, lower byte
V
CC
Power
V
SS
Ground
Selection guide
Symbol -45 -50 -60 Unit
Maximum RAS access time t
RAC
45 50 60 ns
Maximum column address access time t
AA
23 25 30 ns
Maximum CAS access time t
CAC
10 12 15 ns
Maximum output enable (OE) access time t
OEA
12 13 15 ns
Minimum read or write cycle time t
RC
75 80 100 ns
Minimum hyper page mode cycle time t
HPC
20 20 25 ns
Maximum operating current I
CC1
155 145 135 mA
Maximum CMOS standby current I
CC5
1.0 1.0 1.0 mA