55GN01C
器件描述：UHF Wide-band Low-noise Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：46.03KB，共6页
Sponsor by e络盟器件资料摘要：
55GN01C
No.7769-1/6
Features
•
High cutoff frequency : f
T
= 5.5GHz typ.
•
High gain : S21e
2
=9.5dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
10 V
Emitter-to-Base Voltage V
EBO
3V
Collector Current I
C
70 mA
Collector Dissipation P
C
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=10V, I
E
=0 0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=2V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=5V, I
C
=10mA 100 180
Gain-Bandwidth Product
f
T
1V
CE
=3V, I
C
=5mA 3.0 4.5 GHz
f
T
2V
CE
=5V, I
C
=20mA 5.5 GHz
Output Capacitance Cob V
CB
=10V, f=1MHz 1.1 1.3 pF
Reverse Transfer Capacitance Cre V
CB
=10V, f=1MHz 0.7 pF
Forward Transfer Gain
S21e
2
V
CE
=5V, I
C
=20mA, f=1GHz 6.5 9.5 dB
Noise Figure NF V
CE
=3V, I
C
=5mA, f=1GHz, Z
S
=Z
L
=50Ω 1.9 dB
Marking : ZW
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7769
71504 TS IM TA-101028
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
55GN01C
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications
No.7769-1/6
Features
•
High cutoff frequency : f
T
= 5.5GHz typ.
•
High gain : S21e
2
=9.5dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
10 V
Emitter-to-Base Voltage V
EBO
3V
Collector Current I
C
70 mA
Collector Dissipation P
C
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=10V, I
E
=0 0.1 µA
Emitter Cutoff Current I
EBO
V
EB
=2V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=5V, I
C
=10mA 100 180
Gain-Bandwidth Product
f
T
1V
CE
=3V, I
C
=5mA 3.0 4.5 GHz
f
T
2V
CE
=5V, I
C
=20mA 5.5 GHz
Output Capacitance Cob V
CB
=10V, f=1MHz 1.1 1.3 pF
Reverse Transfer Capacitance Cre V
CB
=10V, f=1MHz 0.7 pF
Forward Transfer Gain
S21e
2
V
CE
=5V, I
C
=20mA, f=1GHz 6.5 9.5 dB
Noise Figure NF V
CE
=3V, I
C
=5mA, f=1GHz, Z
S
=Z
L
=50Ω 1.9 dB
Marking : ZW
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7769
71504 TS IM TA-101028
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
55GN01C
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications