2N3467
器件描述：Small Signal Transistor PNP- Saturated Switch Transistor Chip
器件厂商：CENTRAL [Central Semiconductor Corp]
文件大小：80.65KB，共1页
Sponsor by e络盟器件资料摘要：
PROCESS CP767
Small Signal Transistor
PNP- Saturated Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N3467
2N3468
GEOMETRY
PROCESS DETAILS
R0 (24-June 2003)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
12,300
BACKSIDE COLLECTOR
Process EPITAXIAL PLANAR
Die Size 30 x 30 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 3.85 x 4.20 MILS
Emitter Bonding Pad Area 7.35 x 3.75 MILS
Top Side Metalization Al - 30,000
Å
Back Side Metalization Au - 15,000Å
PRELIMINARY
Small Signal Transistor
PNP- Saturated Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N3467
2N3468
GEOMETRY
PROCESS DETAILS
R0 (24-June 2003)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
12,300
BACKSIDE COLLECTOR
Process EPITAXIAL PLANAR
Die Size 30 x 30 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 3.85 x 4.20 MILS
Emitter Bonding Pad Area 7.35 x 3.75 MILS
Top Side Metalization Al - 30,000
Å
Back Side Metalization Au - 15,000Å
PRELIMINARY