Chip Electrical &Optical Characteristics
Light Current
I
c(on )
(m A)
@V
CE
=5V
Ee=0.5mW /cm
2
Saturation
Vo ltage
V
CE(sat )
(V)
@I
C
=0.1 mA
Ee=0.5mW /cm
2
Breakdow n
Vo ltag eV
BR(C EO )
(V)
@I
C
=0.1 mA
Ee=0 mW /cm
2
Dark Current
I
D
(n A)
@V
CE
=10V
Ee=0 mW /cm
2
Part Nu mber
Materi al
Wave length
p(nm )
Lens
Color
Typ. Max. Min. Max.
Viewing
Angle
21/2
BPT-NP03C1940(400-1100)0.5 0.5 30 100
BPT-NP13C 40(400-1100)0.450.5 30 100
BPT-NP23C1
Si-Phototransistor
(NPN)
940(400-1100)
Water
Clear
0.45 0.50 30 100
-
BPT-NP03C2 940(400-1100) 0.65 0.50 30 100
BPT-NP13C2 940(400-1100) 0.45 0.50 30 100
BPT-NP23C2
Si-Phototransistor
(NPN)
940(400-1100)
Water
Clear
0.65 0.50 30 100
-
. a m e r ica n b r ig h tle d . co m
AMERICAN BRIGHT
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©
2003 American B right Optoelectronics C orporation. S pecifications subject to change without notice.
Phototransistors Side Look
IR-13