AF9926N
N-Channel Enhancement Mode Power MOSFET


This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
„ Features

- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package


„ Product Summary

BV
DSS
(V) R
DS(ON)
(mΩ) I
D
(A)
20 30 6



„ Pin Assignments

SO-8
5
6
7
8
4
3
2
1 D1
D1
D2
D2
S1
G1
S2
G2

„ General Description

The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.









„ Pin Descriptions


Pin Name Description
S1/2 Source
G1/2 Gate
D1/2 Drain


„ Ordering information

A X 9926N X X X
PN PackageFeature
F :MOSFET S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel